Recent experimental developments in the field of semiconductor quantum dot (QD)
spectroscopy are discussed. Firstly, we report about single QD exciton two-level systems …

Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …

The intermediate-band solar cell (IBSC) concept has been recently proposed to enhance the
current gain from the solar spectrum whilst maintaining a large open-circuit voltage. Its main …

The intermediate band solar cell (IBSC) has drawn the attention of the scientific community
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …

This paper reviews the present status of recently developed ab‐initio as well as
semiempirical electronic structure methods that are particularly suited for semiconductors …

Power efficiencies> 60% have been predicted for idealized quantum dot (QD) intermediate
band solar cells. This goal has not yet been realized, due in part to nonidealities that result …

By application of external electric field, we demonstrate the ability to controllably manipulate
the homogenous linewidth of exciton transitions in a single self-assembled In (Ga) As …

A rate-equation model, in which three discrete quantum-dot (QD) energy levels are assumed
and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is …

The intermediate-band concept is invoked to explain the photoresponse spectra obtained for
unbiased devices fabricated from GaAs quantum rings grown by a droplet epitaxy technique …

We present a study of the hole emission processes in InAs/GaAs quantum dots using
capacitance and admittance spectroscopies. From the conductance map**, the hole …