Enhancing Magnetic Dam** under GaAs Band-Edge Photoexcitation in a Co2FeAl/n-GaAs Heterojunction
C Kong, L Song, X Zhao, H Wang, J Zhao… - … Applied Materials & …, 2024 - ACS Publications
The ultrafast manipulation of spin in ferromagnet-semiconductor (FM/SC) heterojunctions is
a key issue for advancing spintronics, where magnetic dam** and interfacial spin …
a key issue for advancing spintronics, where magnetic dam** and interfacial spin …
Magnetization nutation in magnetic semiconductors: Effective spin model with anisotropic RKKY exchange interaction
H Kachkachi - ar** in Fe/CoO with spin conductor Ag layer at interface
J He, ZR Zhao, H ** by …
Long-Range Magnetic Interaction in InGaAs/GaAs/δ-Heterostructures
MV Dorokhin, PB Demina, EI Malysheva… - Technical Physics …, 2020 - Springer
Low-temperature circularly polarized electroluminescence in InGaAs/GaAs/δ-
heterostructures has been studied. It is established that the degree of circular polarization …
heterostructures has been studied. It is established that the degree of circular polarization …
Role of resident electrons in the manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures
MV Dorokhin, MV Ved, PB Demina, DV Khomitsky… - Physical Review B, 2021 - APS
The GaAs/InGaAs quantum wells with a ferromagnetic δ〈 Mn〉 layer in GaAs barrier
demonstrate a set of interesting spin-related phenomena originating from Mn-hole …
demonstrate a set of interesting spin-related phenomena originating from Mn-hole …
Current-Induced Spin Polarization and Dynamic Nuclear Polarization: Generation and Manipulation of Electron and Nuclear Spin Polarization in Gallium Arsenide
J Iafrate - 2020 - deepblue.lib.umich.edu
Spintronics would utilize the spin of the electron for information processing and storage,
leading to devices that may be smaller, faster, and more energy-efficient than their electronic …
leading to devices that may be smaller, faster, and more energy-efficient than their electronic …
[PDF][PDF] Спиновая динамика в низкоразмерных структурах на основе полупроводников А (3) В (5) и топологических изоляторов
ДВ Хомицкий - diss.unn.ru
За последние два десятилетия спинтроника как часть физики полупроводников, в том
числе на основе соединений А (3) B (5), посвящѐнная управлению и использованию …
числе на основе соединений А (3) B (5), посвящѐнная управлению и использованию …
Дальнодействующее магнитное взаимодействие в гетероструктурах InGaAs/GaAs/-Mn
МВ Дорохин, ПБ Демина, ЕИ Малышева… - Письма в Журнал …, 2020 - mathnet.ru
Исследована низкотемпературная циркулярно поляризованная
электролюминесценция в гетероструктурах InGaAs/GaAs/$\delta $-$\langle $ Mn …
электролюминесценция в гетероструктурах InGaAs/GaAs/$\delta $-$\langle $ Mn …