Lateral‐polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence
Aluminum‐gallium‐nitride alloys (Al x Ga1–x N, 0≤ x≤ 1) can emit light covering the
ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full …
ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full …
“W-shaped” injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate
J Li, C Li, M Xu, Z Ji, K Shi, X Xu, H Li, X Xu - Optics Express, 2017 - opg.optica.org
Injection current, and temperature, dependences of the electroluminescence (EL) spectrum
from green InGaN/GaN multiple quantum well (MQW)-based light-emitting diodes (LED) …
from green InGaN/GaN multiple quantum well (MQW)-based light-emitting diodes (LED) …
Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate
C Li, J Li, M Xu, Z Ji, K Shi, H Li, Y Wei, X Xu - Scientific Reports, 2020 - nature.com
This study aimed to investigate temperature dependencies at different injection currents
(ICs) of the electroluminescence (EL) spectra from a green InGaN/GaN light-emitting diode …
(ICs) of the electroluminescence (EL) spectra from a green InGaN/GaN light-emitting diode …
Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
L Qiao, ZG Ma, H Chen, HY Wu, XF Chen… - Chinese …, 2016 - iopscience.iop.org
In this study, the influence of multiple interruptions with trimethylindium (TMIn)-treatment in
InGaN/GaN multiple quantum wells (MQWs) on green light-emitting diode (LED) is …
InGaN/GaN multiple quantum wells (MQWs) on green light-emitting diode (LED) is …
Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer
In this work, we report a significantly boosted defect-insensitive ultraviolet emission from
InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) …
InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) …
Opto-electronic HEMT
P Moens, P Vanmeerbeek, A Banerjee - US Patent 10,964,733, 2021 - Google Patents
2020-10-16 Assigned to DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL
AGENT reassignment DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL …
AGENT reassignment DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL …
Enabling High-Injection Current Light-Emitting Diodes Prepared on 10- -Thick GaN Films Grown by Hydride Vapor Phase Epitaxy
YA Chen, CW Chang, CH Kuo - IEEE Transactions on Electron …, 2015 - ieeexplore.ieee.org
In this paper, we successfully introduced the sputtered AlN/patterned sapphire substrate
template into hydride vapor phase epitaxy (HVPE) using a two-step growth method. This …
template into hydride vapor phase epitaxy (HVPE) using a two-step growth method. This …
[PDF][PDF] ЭЛЕКТРОННО-ЦИКЛОТРОННЫЙ РЕЗОНАНСНЫЙ РАЗРЯД, ПОДДЕРЖИВАЕМЫЙ МИЛЛИМЕТРОВЫМ ИЗЛУЧЕНИЕМ: ФИЗИЧЕСКИЕ ОСНОВЫ И …
АВ Водопьянов - 2016 - old.ipfran.ru
Несмотря на длительную историю изучения взаимодействия частиц плазмы со
сверхвысокочастотными полями в магнитном поле в условиях электронно …
сверхвысокочастотными полями в магнитном поле в условиях электронно …