This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

In recent years, non-volatile memory (NVM) technologies have emerged as candidates for
future universal memory. NVMs generally have advantages such as low leakage power …

Various new nonvolatile memory (NVM) technologies have emerged recently. Among all the
investigated new NVM candidate technologies, spin-torque-transfer memory (STT-RAM, or …

In this paper, we explore the possibility of using STT-RAM technology to completely replace
DRAM in main memory. Our goal is to make STT-RAM performance comparable to DRAM …

Using nonvolatile memories in memory hierarchy has been investigated to reduce its energy
consumption because nonvolatile memories consume zero leakage power in memory cells …

Magnetic random access memory (MRAM) is a promising memory technology, which has
fast read access, high density, and non-volatility. Using 3D heterogeneous integrations, it …

High density, low leakage and non-volatility are the attractive features of Spin-Transfer-
Torque-RAM (STT-RAM), which has made it a strong competitor against SRAM as a …

Magnetic Random Access Memory (MRAM) is a very promising emerging memory
technology because of its various advantages such as nonvolatility, high density and …

The emerging Spin Torque Transfer memory (STT-RAM) is a promising candidate for future
on-chip caches due to STT-RAM's high density, low leakage, long endurance and high …

Caching techniques have been an efficient mechanism for mitigating the effects of the
processor-memory speed gap. Traditional multi-level SRAM-based cache hierarchies …