Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

Recent advances provide new opportunities in the field of polymer piezoelectric materials.
Piezoelectric materials provide unique insights to the fundamental understanding of the …

We demonstrate air-stable low voltage flexible nonvolatile memory transistors by embedding
gold nanoparticles (Au NPs) in poly (methyl methacrylate)(PMMA) as the charge storage …

Long-term stability of high-and low-resistance states in full-organic ferroelectrically gated
graphene transistors is an essential prerequisite for memory applications. Here, we …

We propose a tripartite biochemical mechanism for memory. Three physiologic components
are involved, namely, the neuron (individual and circuit), the surrounding neural …

The feasibility of a high speed ferroelectric graphene memory device using a ferroelectric
polymer (PVDF–TrFE)/graphene stack has been demonstrated. The conductivity of this …

Монография является обобщением результатов обширных исследований структур и
приборов на основе арсенида галлия с глубокими примесными центрами, проводимых …

The monograph is generalization of the results of extensive research into structures and
devices based on gallium arsenide with deep impurity centers carried out in Tomsk State …

Non-volatile ferroelectric control of magnetic domains has been demonstrated in ultra-thin
cobalt layers at room temperature. The sensitivity of magnetic anisotropy energy to the …

Control of magnetic domain walls (DWs) and their propagation is among the most promising
development directions for future information-storage devices. The well-established tools for …