Van der Waals heterostructures
The integration of dissimilar materials into heterostructures has become a powerful tool for
engineering interfaces and electronic structure. The advent of 2D materials has provided …
engineering interfaces and electronic structure. The advent of 2D materials has provided …
Van der Waals heterostructures by design: from 1D and 2D to 3D
Heterostructures with designable electronic interfaces represent the material foundation for
modern electronic and optoelectronic devices. The conventional heterostructures rely on …
modern electronic and optoelectronic devices. The conventional heterostructures rely on …
Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces
The ultrawide band gap, high breakdown electric field, and large-area affordable substrates
make β-Ga2O3 promising for applications of next-generation power electronics, while its …
make β-Ga2O3 promising for applications of next-generation power electronics, while its …
Ambipolar Channel p‐TMD/n‐Ga2O3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel
Abstract Highly crystalline 2D/3D‐mixed p‐transition metal dichalcogenide (TMD)/n‐Ga2O3
heterojunction devices are fabricated by mechanical exfoliation of each p‐and n‐type …
heterojunction devices are fabricated by mechanical exfoliation of each p‐and n‐type …
Bidirectional Photoresponse in a Mixed-Dimensional MoS2/Ge Heterostructure and Its Optic-Neural Synaptic Behavior for Colored Pattern Recognition
Y Zhang, B Wang, Z Han, X Shi, N Zhang, T Miao… - ACS …, 2023 - ACS Publications
Realization of multi-functional synaptic devices is imperative to deploy high-performance
brain-like vision systems. Here, a junction field-effect transistor based on a two-dimensional …
brain-like vision systems. Here, a junction field-effect transistor based on a two-dimensional …
High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2
Gallium trioxide, β‐Ga2O3, has been recently studied due to its promising semiconducting
properties as active material in transistors or Schottky diodes. Transistors with β‐Ga2O3 …
properties as active material in transistors or Schottky diodes. Transistors with β‐Ga2O3 …
Freestanding Wide‐Bandgap Semiconductors Nanomembrane from 2D to 3D Materials and Their Applications
Wide‐bandgap semiconductors (WBGS) with energy bandgaps larger than 3.4 eV for GaN
and 3.2 eV for SiC have gained attention for their superior electrical and thermal properties …
and 3.2 eV for SiC have gained attention for their superior electrical and thermal properties …
Ultrafast laser writing of liquid crystal waveguides
B Chen, P ** high-performance Ga2O3-based transistors. Distinct from bulk materials, excess …