The photoexcitation life cycle from incident photon (and creation of photoexcited electron–
hole pair) to ultimate extraction of electrical current is a complex multiphysics process …

Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great
attention in many areas, such as optical fiber communication, sensing, missile guidance …

Many gadgets in our daily life work on the photodetection principle. These photodetectors
(such as silicon (Si), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs)) work …

In recent years, the field of terahertz (THz) science and technology has entered a completely
new phase of unprecedented expansion that is generating ever growing levels of broad …

Epitaxial GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures is
observed to have a significantly shorter carrier lifetime than GaAs grown at normal substrate …

Graphene-based photodetectors are promising new devices for high-speed optoelectronic
applications. However, despite recent efforts it is not clear what determines the ultimate …

We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the
transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved …

Experimental verification of analytic formulas for the dispersion and the attenuation of
electrical transient signals propagating on coplanar transmission lines is presented. The …

We demonstrate the ultrafast photoinduced Mott transition from a charge transfer insulator to
a metal in a halogen-bridged Ni-chain compound by pump-probe reflection spectroscopy …

We have studied terahertz emission from interdigitated finger photomixers coupled to planar
antenna structures. Using both pulsed and continuous-wave excitation, polarization …