GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
In this article, the DC and RF performance of a SiN passivated 20-nm gate length
metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with highly doped …
metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with highly doped …
[ΒΙΒΛΙΟ][B] Nanometer Cmos
This book presents the material necessary for understanding the physics, operation, design,
and performance of modern MOSFETs with nanometer dimensions. It offers a brief …
and performance of modern MOSFETs with nanometer dimensions. It offers a brief …
p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of∼ 800 V
As an attractive next generation ultrawide bandgap material, Ga 2 O 3 has been
demonstrated to be capable of high voltage operation. However, the lack of shallow p-type …
demonstrated to be capable of high voltage operation. However, the lack of shallow p-type …
An ultra-low noise figure and multi-band re-configurable low noise amplifier
In this article, we design and fabricate an ultra-low noise figure, multi-band low noise
amplifier (LNA) monolithic microwave integrated circuit (MMIC) using GaAs pHEMT process …
amplifier (LNA) monolithic microwave integrated circuit (MMIC) using GaAs pHEMT process …
20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications
In this paper, the RF and DC behaviours of a SiN-passivated 20-nm gate length
metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with\updelta δ …
metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with\updelta δ …
Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications
J Ajayan, T Ravichandran, P Mohankumar… - … -International Journal of …, 2018 - Elsevier
In this work, we systematically investigated the DC-RF and breakdown voltage
characteristics of L g= 20 nm novel asymmetric GaAs metamorphic high electron mobility …
characteristics of L g= 20 nm novel asymmetric GaAs metamorphic high electron mobility …
35-nm InP HEMT SMMIC amplifier with 4.4-dB gain at 308 GHz
We report the first submillimeter-wave monolithic microwave integrated circuit (MMIC)
amplifier with 4.4-dB measured gain at 308-GHz frequency, making it the highest frequency …
amplifier with 4.4-dB measured gain at 308-GHz frequency, making it the highest frequency …
High-performance InGaAs HEMTs on GaAs substrate using AlAs/GaAs superlattice buffer-assisted heterostructure growth
J Jeong, J Kim, S Kim - Journal of Alloys and Compounds, 2025 - Elsevier
Recently, InGaAs-channel-based high-electron-mobility transistors (HEMTs), typically grown
on InP substrates, have emerged as key components for next-generation wireless …
on InP substrates, have emerged as key components for next-generation wireless …
[PDF][PDF] 22 nm In0: 75Ga0: 25As channel-based HEMTs on InP/GaAs substrates for future THz applications
In this work, the performance of Lg D 22 nm In0: 75Ga0: 25As channel-based high electron
mobility transistor (HEMT) on InP substrate is compared with metamorphic high electron …
mobility transistor (HEMT) on InP substrate is compared with metamorphic high electron …