Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Neuromorphic computing is a promising alternative to conventional computing systems as it
could enable parallel computation and adaptive learning process. However, the …

Electrostatic capacitors are foundational components of advanced electronics and high-
power electrical systems owing to their ultrafast charging-discharging capability …

Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity
at the nanoscale into next-generation memory and logic devices. This is because their …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …