Design of energy-efficient and robust ternary circuits for nanotechnology

MH Moaiyeri, A Doostaregan, K Navi - IET Circuits, Devices & Systems, 2011 - IET
Novel high-performance ternary circuits for nanotechnology are presented here. Each of
these carbon nanotube field-effect transistor (CNFET)-based circuits implements all the …

A universal method for designing low‐power carbon nanotube FET‐based multiple‐valued logic circuits

MH Moaiyeri, RF Mirzaee… - IET Computers & …, 2013 - Wiley Online Library
This study presents new low‐power multiple‐valued logic (MVL) circuits for nanoelectronics.
These carbon nanotube field effect transistor (FET)(CNTFET)‐based MVL circuits are …

Design of two Low-Power full adder cells using GDI structure and hybrid CMOS logic style

V Foroutan, MR Taheri, K Navi, AA Mazreah - Integration, 2014 - Elsevier
Full adder is one of the most important digital components for which many improvements
have been made to improve its architecture. In this paper, we present two new symmetric …

High-speed full adder based on minority function and bridge style for nanoscale

K Navi, HH Sajedi, RF Mirzaee, MH Moaiyeri, A Jalali… - Integration, 2011 - Elsevier
In this paper a new high-speed and high-performance Full Adder cell, which is implemented
based on CMOS bridge style and minority function, is proposed. Several simulations …

Design and analysis of a high-performance CNFET-based Full Adder

MH Moaiyeri, RF Mirzaee, K Navi… - International Journal of …, 2012 - Taylor & Francis
This article presents a high-speed and high-performance Carbon Nanotube Field Effect
Transistor (CNFET) based Full Adder cell for low-voltage applications. The proposed Full …

Design and analysis of low power high-speed 1-bit full adder cells for VLSI applications

VR Tirumalasetty, MR Machupalli - International journal of …, 2019 - Taylor & Francis
This paper presents a low power and high speed two hybrid 1-bit full adder cells employing
both pass transistor and transmission gate logics. These designs aim to minimise power …

An ultra-low-power 9T SRAM cell based on threshold voltage techniques

M Moghaddam, S Timarchi, MH Moaiyeri… - Circuits, Systems, and …, 2016 - Springer
This paper presents a new nine-transistor (9T) SRAM cell operating in the subthreshold
region. In the proposed 9T SRAM cell, a suitable read operation is provided by suppressing …

An energy-efficient full adder cell using CNFET technology

MR Reshadinezhad, MH Moaiyeri… - IEICE transactions on …, 2012 - search.ieice.org
The reduction in the gate length of the current devices to 65 nm causes their IV
characteristics to depart from the traditional MOSFETs. As a result, manufacturing of new …

Energy and area efficient three-input XOR/XNORs with systematic cell design methodology

T Nikoubin, M Grailoo, C Li - IEEE Transactions on Very Large …, 2015 - ieeexplore.ieee.org
In this brief, we propose three efficient three-input XOR/XNOR circuits as the most significant
blocks of digital systems with a new systematic cell design methodology (SCDM) in hybrid …

A low-voltage and energy-efficient full adder cell based on carbon nanotube technology

K Navi, RS Rad, MH Moaiyeri, A Momeni - Nano-Micro Letters, 2010 - Springer
Scaling problems and limitations of conventional silicon transistors have led the designers to
exploit novel nano-technologies. One of the most promising and feasible nano-technologies …