Fillers and methods to improve the effective (out-plane) thermal conductivity of polymeric thermal interface materials–A review

N Mumtaz, Y Li, R Artiaga, Z Farooq, A Mumtaz, Q Guo… - Heliyon, 2024 - cell.com
The internet of things and growing demand for smaller and more advanced devices has
created the problem of high heat production in electronic equipment, which greatly reduces …

Idealizing Tauc plot for accurate bandgap determination of semiconductor with ultraviolet–visible spectroscopy: a case study for cubic boron arsenide

H Zhong, F Pan, S Yue, C Qin, V Hadjiev… - The Journal of …, 2023 - ACS Publications
The Tauc plot is widely used to determine the bandgap of semiconductors, but the actual
plot often exhibits significant baseline absorption below the expected bandgap, leading to …

Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application

S Fang, L Li, D Wang, W Chen, Y Kang… - Advanced Functional …, 2023 - Wiley Online Library
Underwater optical communication (UOC) has attracted considerable interest in the
continuous expansion of human activities in marine/ocean environments. The water‐durable …

Spatiotemporal microscopy: Shining light on transport phenomena

GDB Vazquez, GLG Morganti, A Block… - Advanced Electronic …, 2024 - Wiley Online Library
Transport phenomena like diffusion, convection, and drift play key roles in the sciences and
engineering disciplines. They belong to the most omnipresent and important phenomena in …

Efficient reductive recovery of arsenic from acidic wastewater by a UV/dithionite process

X Yang, X Peng, X Lu, M He, J Yan, L Kong - Water Research, 2024 - Elsevier
The removal of arsenic (As (III)) from acidic wastewater using neutralization or sulfide
precipitation generates substantial arsenic-containing hazardous solid waste, posing …

Room-temperature wavelike exciton transport in a van der Waals superatomic semiconductor

JA Tulyagankhodjaev, P Shih, J Yu, JC Russell… - Science, 2023 - science.org
The transport of energy and information in semiconductors is limited by scattering between
electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails …

Vacancy-induced phonon localization in boron arsenide using a unified neural network interatomic potential

J Zhang, H Zhang, J Wu, X Qian, B Song, CT Lin… - Cell Reports Physical …, 2024 - cell.com
Boron arsenide, considered an ideal semiconductor, inevitably introduces arsenic defects
during crystal growth. Here, we develop a unified neural network interatomic potential with …

Exceptionally high hole mobilities in monolayer group-IV monochalcogenides GeTe and SnTe

WH **ao, B Zeng, ZK Ding, H Pan, WW Liu… - Applied Physics …, 2023 - pubs.aip.org
Two-dimensional semiconductors are considered as promising channel materials for next-
generation nanoelectronics devices, while their practical applications are typically limited by …

A MoS2/BAs heterojunction as photodetector

G **ong, J Lu, R Wang, Z Lin, S Lu, J Li, Z Tong… - Materials Today …, 2024 - Elsevier
With high thermal conductivity and carrier mobility, cubic boron arsenide (BAs) shows huge
potential in high-power and high-speed optoelectronic devices. However, researches about …

Assessing Carrier Mobility, Dopability, and Defect Tolerance in the Chalcogenide Perovskite

Z Yuan, D Dahliah, R Claes, A Pike, DP Fenning… - PRX Energy, 2024 - APS
The chalcogenide perovskite Ba Zr S 3 has attracted much attention as a promising solar
absorber for thin-film photovoltaics. Here we use first-principles calculations to evaluate its …