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Light emitting diodes reliability review
The increasing demand for light emitting diodes (LEDs) has been driven by a number of
application categories, including display backlighting, communications, medical services …
application categories, including display backlighting, communications, medical services …
First-principles calculations for defects and impurities: Applications to III-nitrides
First-principles calculations have evolved from mere aids in explaining and supporting
experiments to powerful tools for predicting new materials and their properties. In the first …
experiments to powerful tools for predicting new materials and their properties. In the first …
[كتاب][B] The blue laser diode: GaN based light emitters and lasers
S Nakamura, G Fasol - 2013 - books.google.com
Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related
materials has recently propelled these materials into the mainstream of interest. It is very …
materials has recently propelled these materials into the mainstream of interest. It is very …
Growth and applications of group III-nitrides
Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
[كتاب][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
The blue laser diode. The complete story
The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book
that he enjoys this fact and wishes his readers to become familiar with his success …
that he enjoys this fact and wishes his readers to become familiar with his success …
III–nitrides: Growth, characterization, and properties
During the last few years the developments in the field of III–nitrides have been spectacular.
High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers …
High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers …
Polarization effects in nitride semiconductors and device structures
Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …
Wide band gap ferromagnetic semiconductors and oxides
Recent advances in the theory and experimental realization of ferromagnetic
semiconductors give hope that a new generation of microelectronic devices based on the …
semiconductors give hope that a new generation of microelectronic devices based on the …
Ion implantation into GaN
The current status of ion beam processing of GaN is reviewed. In particular, we discuss the
following aspects of ion implantation into GaN:(i) damage build-up and amorphization,(ii) …
following aspects of ion implantation into GaN:(i) damage build-up and amorphization,(ii) …