A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation
Understanding the response and mechanism of semiconductor materials under irradiation
environment is important for some critical technological applications. In this work we …
environment is important for some critical technological applications. In this work we …
Machine learning-enhanced detection of minor radiation-induced defects in semiconductor materials using Raman spectroscopy
JY Chia, N Thamrongsiripak, S Thongphanit… - Journal of Applied …, 2024 - pubs.aip.org
Radiation damage in semiconductor materials is a crucial concern for electronic
applications, especially in the fields of space, military, nuclear, and medical electronics. With …
applications, especially in the fields of space, military, nuclear, and medical electronics. With …
Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons
A Šagátová, B Zaťko, F Dubecký, TL Anh, V Nečas… - Applied Surface …, 2017 - Elsevier
Radiation hardness of semi-insulating GaAs detectors against 60 Co gamma-rays, fast
neutrons and 5 MeV electrons was compared. Slight improvements in charge collection …
neutrons and 5 MeV electrons was compared. Slight improvements in charge collection …
Investigation of radiation effect on structural and optical properties of GaAs under high-energy electron irradiation
A Phakkhawan, A Sakulkalavek, S Buranurak… - Materials, 2022 - mdpi.com
A systematic investigation of the changes in structural and optical properties of a semi-
insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study …
insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study …
Study of changes in surface composition and morphology of GaAs irradiated with different energies protons
X Liu, B Duan, H Xue, A Ejaz, T Wang - Nuclear Instruments and Methods …, 2025 - Elsevier
Gallium arsenide (GaAs) is a direct bandgap semiconductor material known for its excellent
radiation resistance. This study investigates the radiation effects on both intrinsic GaAs and …
radiation resistance. This study investigates the radiation effects on both intrinsic GaAs and …
Impact of radiation-induced point defects on thermal carrier decay processes in GaAs
The relative rate of optical to thermal carrier decay plays a critical role in the performance of
optoelectronic devices, and radiation-induced point defects can significantly affect this ratio …
optoelectronic devices, and radiation-induced point defects can significantly affect this ratio …
Gamma-ray irradiation effect on planar defect evolution of lattice-matched InGaAsN/GaAs/Ge grown by MOVPE
P Wanarattikan, A Phakkhawan, A Sakulkalavek… - Vacuum, 2024 - Elsevier
This study explores structural changes in lattice-matched InGaAsN/GaAs/Ge films grown by
MOVPE under gamma-ray irradiation. Exposure to 60Co gamma rays at doses ranging from …
MOVPE under gamma-ray irradiation. Exposure to 60Co gamma rays at doses ranging from …