Short‐wave infrared photodetectors and imaging sensors based on lead chalcogenide colloidal quantum dots

Z Wu, Y Ou, M Cai, Y Wang, R Tang… - Advanced Optical …, 2023‏ - Wiley Online Library
Lead chalcogenide quantum dots (QDs) are one of the next generations of ideal narrow
bandgap infrared semiconductors, due to their succinct solution processing, low‐cost …

Engineering III–V semiconductor nanowires for device applications

J Wong‐Leung, I Yang, Z Li, SK Karuturi… - Advanced …, 2020‏ - Wiley Online Library
III–V semiconductor nanowires offer potential new device applications because of the
unique properties associated with their 1D geometry and the ability to create quantum wells …

A Self‐Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature

S Wei, Z Li, K Murugappan, Z Li, F Zhang… - Advanced …, 2023‏ - Wiley Online Library
The fast development of the Internet of Things (IoT) has driven an increasing consumer
demand for self‐powered gas sensors for real‐time data collection and autonomous …

Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions

X Yuan, D Pan, Y Zhou, X Zhang, K Peng… - Applied Physics …, 2021‏ - pubs.aip.org
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Detector-only spectrometer based on structurally colored silicon nanowires and a reconstruction algorithm

J Meng, JJ Cadusch, KB Crozier - Nano Letters, 2019‏ - ACS Publications
Spectroscopy is a cornerstone in the field of optics. Conventional spectrometers generally
require two elements. The first provides wavelength selectivity, for example, diffraction …

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays

X Zhang, F Zhang, R Yi, N Wang, Z Su… - Light: Science & …, 2024‏ - nature.com
Highly integrated optoelectronic and photonic systems underpin the development of next-
generation advanced optical and quantum communication technologies, which require …

A new strategy for selective area growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays for optoelectronic device applications

F Zhang, X Zhang, Z Li, R Yi, Z Li… - Advanced Functional …, 2022‏ - Wiley Online Library
III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact
light sources and photodetectors from visible to infrared spectral region. However, most of …

Vertical emitting nanowire vector beam lasers

X Zhang, R Yi, B Zhao, C Li, L Li, Z Li, F Zhang… - ACS …, 2023‏ - ACS Publications
Due to the peculiar structured light field with spatially variant polarizations on the same
wavefront, vector beams (VBs) have sparked research enthusiasm in develo** advanced …

Self‐powered InP nanowire photodetector for single‐photon level detection at room temperature

Y Zhu, V Raj, Z Li, HH Tan, C Jagadish… - Advanced …, 2021‏ - Wiley Online Library
Highly sensitive photodetectors with single‐photon level detection are one of the key
components to a range of emerging technologies, in particular the ever‐growing field of …

Nanophotonic structures energized short-wave infrared quantum dot photodetectors and their advancements in imaging and large-scale fabrication techniques

D Wu, G Xu, J Tan, X Wang, Y Zhang, L Ma, W Chen… - Nanoscale, 2025‏ - pubs.rsc.org
Short-wave infrared (SWIR) photodetectors (PDs) have a wide range of applications in the
field of information and communication. Especially in recent years, with the increasing …