Recent advances in light sources on silicon
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …
research. Several important breakthroughs were made in this field in the past few years. In …
Integrated lasers on silicon at communication wavelength: a progress review
With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …
has been developed and applied for high‐bandwidth data transmission. Contributed by the …
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
elements. Here, we report GeSn microdisk lasers encapsulated with a SiN x stressor layer to …
Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors
(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …
Electrically injected GeSn lasers on Si operating up to 100 K
Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration,
and significant progress in GeSn material development shows promise for such laser …
and significant progress in GeSn material development shows promise for such laser …
GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain
Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …
Room temperature lasing in GeSn microdisks enabled by strain engineering
The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …
a monolithic technology that can be manufactured within mainstream silicon photonics …
Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Strain engineered electrically pumped SiGeSn microring lasers on Si
SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at
wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically …
wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically …
All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors
Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …
strain and engineer complex heterostructures enabling a variety of innovative applications …