The degradation of quantum efficiency in negative electron affinity GaAs photocathodes under gas exposure

N Chanlek, JD Herbert, RM Jones… - Journal of Physics D …, 2014 - iopscience.iop.org
The influence of O 2, CO 2, CO, N 2, H 2 and CH 4 on the stability of the quantum efficiency
(QE) of a negative electron affinity gallium arsenide (GaAs) photocathode activated with …

Comparison of activation behavior of Cs-O and Cs-NF3-adsorbed GaAs (1 0 0)-β2 (2× 4) surface: From DFT simulation to experiment

S Li, Y Zhang, K Zhang, J Zhang, J Zhan, F Shi… - Journal of Colloid and …, 2022 - Elsevier
To clarify the performance differences between Cs-O and Cs-NF 3-activated GaAs
photocathodes, the changes in adsorption characteristics with Cs coverage for the Cs-O and …

A first principle study on systematic stability and electronic properties of GaN nanowire surface with Cs/Li/NF3 co-adsorption

L Liu, Y Diao, S **a, F Lu, J Tian - Applied Surface Science, 2019 - Elsevier
In this study, the systematic stability and surface electronic properties of (100) surface GaN
nanowire are investigated through first principle calculations based on density functional …

Effect of excessive Cs and O on activation of GaAs (100) surface: From experiment to theory

Y Zhang, K Zhang, S Li, S Li, Y Qian, F Shi… - Journal of Applied …, 2020 - pubs.aip.org
The surface Cs–O activation process directly determines quantum efficiency and stability of
negative-electron-affinity photocathodes. To investigate the effects of excessive Cs and O …

Gas adsorption on activated AlGaN photocathode: A first-principle study on charge redistribution, work function variation and emission performance attenuation

Y Diao, S **a, Y Dai, H Shi, Y Wang, X Wu - Surfaces and Interfaces, 2024 - Elsevier
AlGaN photocathode has important applications in photoelectronic imaging and vacuum
electronic devices. However, The short lifetime of the photocathode results in higher costs of …

Residual gas adsorption effect on the stability of Cs-activated GaN nanowire photocathode

F Lu, L Liu, J Tian - Applied Surface Science, 2019 - Elsevier
The electronic properties and optical properties of Cs-activated p-doped GaN nanowires
adsorbed by the residual gas molecules (H 2, CO, H 2 O, N 2, CH 4, CO 2) are calculated by …

Cs and Cs/O adsorption mechanism on GaN nanowires photocathode

S **a, L Liu, Y Diao, Y Kong - Journal of Materials Science, 2017 - Springer
We have investigated the stability and electronic properties of GaN nanowires photocathode
based on first-principle calculations. The most stable adsorption configuration of Cs adatoms …

Impact of residual gas on the optoelectronic properties of Cs-sensitized In0. 53Ga0. 47As (0 0 1) surface

Q Fang, Y Shen, S Zhang, X Yang, L Duan… - Journal of Colloid and …, 2021 - Elsevier
Abstract Near-infrared In x Ga 1-x As photocathode with better optoelectronic properties is a
good candidate for low-light-level (LLL) night-vision system. However, the residual gases in …

Atomic bonding states of metal and semiconductor elements

L Ge, M Bo - Physica Scripta, 2023 - iopscience.iop.org
In this paper, we use density functional theory (DFT) to calculate the deformation electron
density of 46 metal and semiconductor elements. The binding-energy and bond-charge …