Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities
Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements
is critical for future electronics with spin-transfer torque magnetoresistive random access …
is critical for future electronics with spin-transfer torque magnetoresistive random access …
Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque
We present a theoretical investigation of the magnetisation reversal process in CoFeB-
based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of …
based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of …
Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit …
DH Kang, M Shin - Scientific reports, 2021 - nature.com
Recently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy
(S-PMA) have been studied extensively because they ensure high thermal stability at …
(S-PMA) have been studied extensively because they ensure high thermal stability at …
Fast switching down to 3.5 ns in sub-5-nm magnetic tunnel junctions achieved by engineering relaxation time
We show fast switching down to 3.5 ns while maintaining high data retention in sub-5-nm
ultra-small magnetic tunnel junctions (MTJs) using multilayered ferromagnets (FMs). We …
ultra-small magnetic tunnel junctions (MTJs) using multilayered ferromagnets (FMs). We …
Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions
Current induced magnetization switching in CoFeB/MgO-based magnetic tunnel junctions
(MTJs) with a perpendicular easy axis is studied above room temperature. The intrinsic …
(MTJs) with a perpendicular easy axis is studied above room temperature. The intrinsic …
Magnetization reversal via domain wall motion in vertical high-aspect-ratio nanopillar with two magnetic junctions
S Honda, Y Sonobe - Journal of Physics D: Applied Physics, 2024 - iopscience.iop.org
A vertical ferromagnetic (FM) nanopillar can be used as magnetic memory owing to
characteristics such as its high storage capacity and high thermal stability. The …
characteristics such as its high storage capacity and high thermal stability. The …
On the temperature-dependent characteristics of perpendicular shape anisotropy-spin transfer torque-magnetic random access memories
W Zhang, Z Tong, Y ** Layers on Thermal Stability of CoFeB/MgO Frames at Various Temperatures
B Kang, YH Hwang, YJ Kim, JS Lee, SH Song, S Lee… - Applied Sciences, 2024 - mdpi.com
The utilization of CoFeB thin films in spintronic devices has attracted significant attention due
to their exceptional magnetic properties, which include high saturation magnetization and …
to their exceptional magnetic properties, which include high saturation magnetization and …
Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions
A shape-anisotropy magnetic tunnel junction (MTJ) holds promise for its scaling into single-
digit nanometers while possessing high data-retention capability. Understanding …
digit nanometers while possessing high data-retention capability. Understanding …
Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization
H Kaneko, R Ota, K Kobayashi, S Kanai… - Applied Physics …, 2024 - iopscience.iop.org
Stochastic magnetic tunnel junctions (s-MTJs) are attracting attention as key elements for
spintronics-based probabilistic (p-) computers. The performance of p-computers is governed …
spintronics-based probabilistic (p-) computers. The performance of p-computers is governed …