Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-
effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout …

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide
power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant …

Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors)
is of the highest priority for sustaining high-power systems in the space radiation …

SEGR and SEB in N-Channel Power MOSFETS - Nuclear Science, IEEE Transactions on
Page 1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 43, NO. 6, DECEMBER 1996 …

Analyses of quasi-stationary avalanche simulations on radiation-hardened power MOSFETs
suggest that the single-event burnout (SEB) failure is determined by the device's avalanche …

Single-event effects (SEEs) in a 650-V state-of-the-art SiC double-trench MOSFET (DT-
MOS) are investigated using the Sentaurus TCAD tools. The safe operation areas (SOAs) for …

The triggering mechanism of single-event burnout (SEB) in SiC power MOSFETs was
studied by white neutron irradiation experiments and device simulations. Electron–hole …

Proposes a physical model of hole-collection following a heavy-ion strike to explain the
development of oxide fields sufficient to cause single-event gate rupture (SEGR) in power …

Bias values, determined experimentally to result in single-event gate rupture (SEGR) in
power metal oxide semiconductor field effect transistors (MOSFETs), are used in 2-D device …