Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

The performance of conventional computer based on von Neumann architecture is limited
due to the physical separation of memory and processor. By synergistically integrating …

Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …

The growing computational demand in artificial intelligence calls for hardware solutions that
are capable of in situ machine learning, where both training and inference are performed by …

The commercial implementation of aqueous Zn-ion batteries is being impeded by the
rampant dendrite growth and exacerbated side reactions on the Zn metal anodes. Herein, a …

Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

The improvement of hydrogen evolution reaction kinetics can be largely accelerated by
introducing a well-designed hydrogen spillover pathway into the catalysts. However, the …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Sense digitalization, the process of transforming sensory experiences into digital data, is an
emerging research frontier that links the physical world with human perception and …