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Interface dipole engineering in metal gate/high-k stacks
[PDF][PDF] A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFET
M Fei, L Hong-**a, F Ji-Bin… - Chin. Physics,(IEEE …, 2012 - cpb.iphy.ac.cn
In this paper the influences of the metal-gate and high-k/SiO2/Si stacked structure on the
metal–oxide–semiconductor field-effect transistor (MOSFET) are investigated. The flat-band …
metal–oxide–semiconductor field-effect transistor (MOSFET) are investigated. The flat-band …
Comprehensive comparison of structural, electrical, and reliability characteristics of HfO2 gate dielectric with H2O or O3 oxidant
YL Cheng, YL Chang, CY Hsieh, JR Lin - Journal of Vacuum Science & …, 2013 - pubs.aip.org
The growth, composition, electrical characteristics, and reliability performance of high-k HfO
2 dielectric films that were deposited by an atomic layer deposition technique are studied …
2 dielectric films that were deposited by an atomic layer deposition technique are studied …