Metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) of 3–4 nm diameter
and 2× 10 12 cm− 2 density are shown to exhibit capacitance-voltage hysteresis of 20.9 V⁠ …

The elemental redistribution and Ge loss in low-energy Ge+ implanted SiO 2 films during
wet-chemical cleaning and annealing procedures are investigated. Two effects of major …

SiGe nanocrystals have been formed in SiO 2 matrix by cosputtering Si, Ge, and SiO 2
independently on Si substrate. Effects of the annealing time and temperature on structural …

Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in Si O 2⁠, ie,
Ge–Si O 2 quantum dot composites, have been formed by ion implantation of Ge+ 74 …

The trap** of charge carriers and the mechanism of the charge transfer were examined in
metal-oxide-semiconductor structures with germanium nanocrystals embedded in a 20 nm …

Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is
of interest for non-volatile memory applications. The device structure consists of a thin HfO2 …

The annealing temperature (TA) dependence of capacitance-voltage (CV) characteristics
has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) …

The formation of interface and border states in metal–oxide–semiconductors structures
associated with the generation of embedded germanium nanocrystals in 20nm SiO2-layers …

Photoluminescence (PL) and dual-metal-oxide-semiconductor (dual-MOS) deep level
transient spectroscopy (DLTS) evaluations were performed for SiGe layers on insulator …

The properties of germanium implanted into the SiO 2 layers in the vicinity of the bonding
interface of silicon-on-insulator structures are studied. It is shown that, under conditions of …