Growth and band gap determination of the single crystal series
M Moustafa, T Zandt, C Janowitz, R Manzke - Physical Review B—Condensed …, 2009 - APS
Single crystals of layered transition-metal dichalcogenide compounds of ZrS x Se 2− x with
composition 0≤ x≤ 2 were grown by the chemical-vapor-transport technique and …
composition 0≤ x≤ 2 were grown by the chemical-vapor-transport technique and …
Optical and photoelectric properties of TlInS2 layered single crystals
Single crystals of the layered compound TlInS2 were grown by direct synthesis of their
constituents. The spectral and optical parameters have been determined using …
constituents. The spectral and optical parameters have been determined using …
Investigation of optical, electrical and optoelectronic properties of SnSe crystals
The optical, electrical and optoelectronic properties of tin selenide crystals are of immense
significance for application in photodetectors and energy conversion and storage devices …
significance for application in photodetectors and energy conversion and storage devices …
Temperature dependence of the band-gap energy and sub-band-gap absorption tails in strongly quantized ZnSe nanocrystals deposited as thin films
The temperature-dependent optical absorption of 3D arrays of close-packed strongly
quantized ZnSe QDs, deposited in thin film form, is studied in the interval from 11 to 340 K …
quantized ZnSe QDs, deposited in thin film form, is studied in the interval from 11 to 340 K …
Investigation of structural, electrical and optical properties of SbXW1-XSe2 single crystals
This article presents systematic studies of Sb XW 1-X Se 2 (X= 0, 0.1) single crystals grown
by direct vapour transport technique. The purity and stoichiometry were tested by energy …
by direct vapour transport technique. The purity and stoichiometry were tested by energy …
Temperature dependence of the optical energy gap and Urbach–Martienssen's tail in the absorption spectra of the layered semiconductor Tl2GaInSe4
The effect of temperature on the optical energy gap for Tl2GaInSe4 layered crystals were
investigated in the temperature range of 10–330K. The variation of the optical absorption …
investigated in the temperature range of 10–330K. The variation of the optical absorption …
Excitonic emission and absorption resonances in V0. 25W0. 75Se2 single crystals grown by direct vapour transport technique
A systematic study on emission and absorption spectra of vanadium mixed tungsten
diselenide single crystals grown by direct vapour transport (DVT) technique is reported. The …
diselenide single crystals grown by direct vapour transport (DVT) technique is reported. The …
Growth and characterisation of sulphur-rich TlIn (S1− xSex) 2 single crystals
Sulphur-rich TlIn (S1− xSex) 2 single crystals (0≤ x≤ 0.10) were grown by the Bridgman
technique. Their structure and composition are studied by X-ray diffraction, scanning …
technique. Their structure and composition are studied by X-ray diffraction, scanning …
Nanostructured CdSe films in low size-quantization regime: temperature dependence of the band gap energy and sub-band gap absorption tails
Temperature dependence of the band gap energy and sub-band gap absorption tails in 3D
assemblies of close packed weakly quantized CdSe quantum dots deposited as thin films …
assemblies of close packed weakly quantized CdSe quantum dots deposited as thin films …
Temperature dependence of absorption edge anisotropy in 2H-MoSe2 layered semiconductors
SY Hu, YC Lee, JL Shen, KW Chen, KK Tiong… - Solid state …, 2006 - Elsevier
The absorption-edge anisotropy of 2H-MoSe2 was studied by photoconductivity (PC)
measurements as a function of temperature in the range of 12–300 K. A significant shift …
measurements as a function of temperature in the range of 12–300 K. A significant shift …