Effects of three-dimensional strain distribution on the performance of GaN-based light-emitting...

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GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth

MIM Taib, SN Waheeda, F Jasman, MZM Yusop… - Vacuum, 2022 - Elsevier
GaN was grown on cone-and dome-patterned sapphire (CPSS and DPSS) at different
nucleation times of 40, 80 and 160 s. The GaN was also grown on flat sapphire substrate …
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Growth Dynamics of Epitaxial Gallium Nitride Films Grown on c-Sapphire Substrates

S Krishna, N Aggarwal, L Goswami, G Gupta - Recent Advances in Thin …, 2020 - Springer
In the present scenario, semiconducting material based devices with new capabilities are
redefining the existing technologies. The developments in III-Nitride thin-film technology …
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