A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field
Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …
nanoscale devices because of their ability to integrate into silicon electronics. However, the …
Resistive switching behavior in ferroelectric heterostructures
ZJ Wang, Y Bai - Small, 2019 - Wiley Online Library
Resistive random‐access memory (RRAM) is a promising candidate for next‐generation
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …
Strain related new sciences and devices in low-dimensional binary oxides
The possibility of generating a large range of elastic strain in low-dimensional materials
offers a vast design space that has led to a plethora of scientific and technological …
offers a vast design space that has led to a plethora of scientific and technological …
Thermal crosstalk in 3-dimensional RRAM crossbar array
Abstract High density 3-dimensional (3D) crossbar resistive random access memory
(RRAM) is one of the major focus of the new age technologies. To compete with the ultra …
(RRAM) is one of the major focus of the new age technologies. To compete with the ultra …
[HTML][HTML] Dielectric, energy storage, and loss study of antiferroelectric-like Al-doped HfO2 thin films
Antiferroelectric thin films have properties ideal for energy storage due to their lower losses
compared to their ferroelectric counterparts as well as their robust endurance properties. We …
compared to their ferroelectric counterparts as well as their robust endurance properties. We …
Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect
Q **a, Y Qin, P Qiu - Advanced Electronic Materials, 2022 - Wiley Online Library
Memristor, processing data storage, and logic operation all‐in‐one, is expected to create a
new era of neuromorphic computing and digital logic. Here, this work demonstrates a …
new era of neuromorphic computing and digital logic. Here, this work demonstrates a …
Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate
We report on the ferroelectricity of a Y-doped HfO 2 thin film epitaxially grown on Si
substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate …
substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate …
Influence of Sr ions on the structure and dielectric properties of Cu/Nb Co-doped BaTiO3 ceramics
J Liu, X Wei, Y Lian, Q Liu, X Xu, D Lu - Ceramics International, 2021 - Elsevier
Abstract Sr-modified Cu/Nb co-doped BaTiO 3 ceramics were prepared using solid-state
reactions and the structures and dielectric properties were studied. All the samples had …
reactions and the structures and dielectric properties were studied. All the samples had …
Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications
In this study, efforts were devoted to unveiling the dual role of single crystalline Cu (5%)
doped ZnO (Cu: ZnO) synthesized by a simple and low-cost chemical process and to …
doped ZnO (Cu: ZnO) synthesized by a simple and low-cost chemical process and to …
Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray …
We report lead-free ferroelectric based resistive switching non-volatile memory (NVM)
devices with epitaxial (1-x) BaTiO3-xBiFeO3 (x= 0.725)(BT-BFO) film integrated on …
devices with epitaxial (1-x) BaTiO3-xBiFeO3 (x= 0.725)(BT-BFO) film integrated on …