Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …

Germanium possesses higher electron and hole mobilities than silicon. There is a big leap,
however, between these basic material parameters and implementation for high …

Solar cells from III-V materials offer outstanding light conversion efficiency and power
densities and have a proven reliability record. Nevertheless, the utilization of III-V devices …

Surface antireflection micro and nanostructures, normally formed by conventional reactive
ion etching, offer advantages in photovoltaic and optoelectronic applications, including …

The fabrication, characterization, and optimization of large area rolled‐up ultracompact
nanomembrane‐based capacitor arrays is demonstrated by combining bottom‐up and top …

The fabrication of highly doped and high quality Ge layers is a challenging and hot topic for
advancements in nanoelectronics, photonics and radiation detectors. In this article, we …

Desirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make
germanium (Ge) an excellent candidate for various applications, such as radiation detectors …

We propose the metal-assisted chemical etching of Ge surfaces in water mediated by
dissolved oxygen molecules (O 2). First, we demonstrate that Ge surfaces around deposited …

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers
between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1–2 …