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A reliable low standby power 10T SRAM cell with expanded static noise margins
E Abbasian, F Izadinasab… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …
Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology
Many researchers are trying to create a low power, high stability, and high-speed static
random access memory (SRAM) cell. This paper introduces an SRAM cell consisting of 12 …
random access memory (SRAM) cell. This paper introduces an SRAM cell consisting of 12 …
A high-performance and energy-efficient ternary multiplier using CNTFETs
Internet-of-things-based embedded systems depend on batteries as an energy resource,
and thus, require energy-efficient circuits for prolonged operation. To achieve energy …
and thus, require energy-efficient circuits for prolonged operation. To achieve energy …
Read improved and low leakage power CNTFET based hybrid 10t SRAM cell for low power applications
Static random access memory (SRAM) cell design has undergone extensive development to
achieve good performance and low power consumption. This paper introduces an SRAM …
achieve good performance and low power consumption. This paper introduces an SRAM …
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
This paper explores an ultra-low-power 10T subthreshold SRAM with high stabilities based
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology
This paper proposes a modified Schmitt-trigger (ST)-based single-ended 11 T (MST11T)
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
A stable low leakage power SRAM with built-in read/write-assist scheme using GNRFETs for IoT applications
E Abbasian, T Mirzaei… - ECS Journal of Solid State …, 2022 - iopscience.iop.org
Abstract Design of circuits using graphene nanoribbon field-effect transistors (GNRFETs), as
promising next-generation devices, can improve total performance of a chip due to offering …
promising next-generation devices, can improve total performance of a chip due to offering …
Design of a highly stable and robust 10T SRAM cell for low-power portable applications
This paper investigates a novel highly stable and robust single-ended 10T SRAM cell
appropriate for low-power portable applications. The cell core of the proposed design is a …
appropriate for low-power portable applications. The cell core of the proposed design is a …
A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications
In this paper, a robust sub-threshold 13 T-SRAM cell is designed, which in addition to
reducing power and energy consumption can show high reliability and have the least error …
reducing power and energy consumption can show high reliability and have the least error …