Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

A normally-off hydrogenated-diamond (H-diamond) field effect transistor (FET) using a HfO 2
gate oxide is demonstrated. The HfO 2 gate oxide has a bilayer structure which is fabricated …

We report on a comparative study of transfer do** of hydrogenated single crystal diamond
surface by insulators featured by high electron affinity, such as Nb 2 O 5, WO 3, V 2 O 5, and …

As a first step to develop a diamond integrated circuit, hydrogenated diamond not and nor
logic circuits composed of depletion-mode (D-mode) and enhancement-mode (E-mode) …

Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate
length hydrogen-terminated diamond field-effect transistors. An extrinsic cutoff frequency of …

High-k oxide insulators (Al 2 O 3 and HfO 2) have been deposited on a single crystalline
hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at …

In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-
diamond), LaAlO 3 films with thin Al 2 O 3 buffer layers are fabricated on the H-diamond …

The wide bandgap semiconductor diamond has been studied to develop high-power and
high-frequency electronic devices. Here, high dielectric constant (high-k) TiO 2/Al 2 O 3 …

Abstract Effects of CaF 2 on the LAS based glass-ceramics and glass-ceramic/diamond
composites have been systematically researched. Structure of glass-ceramics was analyzed …