Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance
In this paper, two III-V material-based junctionless tunnel FET devices, D-1 and D-2, are
proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a …
proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a …
Modeling, simulation investigation of heterojunction (GaSb/Si) vertical TFET-based dielectric modulated biosensor structure
MH Khan, MF Akbar, P Kaur, G Wadhwa - Micro and Nanostructures, 2023 - Elsevier
In this article, an analytical model for dielectric modulated heterojunction (GaSb/Si) vertical
tunnel field-feect transistor (DMH-VTFET) based biosensor has been developed and …
tunnel field-feect transistor (DMH-VTFET) based biosensor has been developed and …
Source material valuation of charge plasma based DG-TFET for RFIC applications
This paper seeks to present a comprehensive analysis to check the viability of four different
source materials in a charge plasma-based double gate tunnel field effect transistor (CP …
source materials in a charge plasma-based double gate tunnel field effect transistor (CP …
Enhanced analog performance and high-frequency applications of dielectric engineered high-K Schottky nanowire FET
Abstract In this paper, Gallium Nitride (GaN) based Dielectric Engineered High-K GaN
Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for …
Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for …
Design and parametric analysis of charge plasma junctionless TFET for biosensor applications
D Manaswi, SR Karumuri… - IEEE Open Journal of …, 2022 - ieeexplore.ieee.org
This paper presents a new design of charge plasma junctionless tunnel field effect transistor
(CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication …
(CP JLTFET) with improved ON current, surface potentials. For the ease of fabrication …
RF analysis of double-gate junctionless tunnel FET for wireless communication systems: a non-quasi static approach
The optimum and acceptable combination of control gate (CG) process parameters, such as
dielectric materials, thickness, and metal work function for a double-gate junctionless tunnel …
dielectric materials, thickness, and metal work function for a double-gate junctionless tunnel …
Proposal and evaluation of Mg2Si-based vertical tunnel field effect transistor for enhanced performance
This work investigates the performance of silicon-on-insulator (SOI) based vertical
heterojunction tunnel FET with magnesium silicide (Mg 2 Si) as source material (Mg 2 Si …
heterojunction tunnel FET with magnesium silicide (Mg 2 Si) as source material (Mg 2 Si …
Deep insights on the performance of different structures of InGaN-based tandem photovoltaic cells: path towards the design of high efficiency PV modules
This paper deals with the performance analysis of different indium gallium nitride (InGaN)-
based solar cells. In particular, single, dual, and triple junction structures are investigated by …
based solar cells. In particular, single, dual, and triple junction structures are investigated by …
Highly Sensitive Ga2O3-Face Tunnel Field Effect Phototransistor for Deep UV Detection
In this article, a Technology Computer-Aided Design (TCAD)-based study has been done for
gallium oxide (Ga 2 O 3) gated UV phototransistor with face tunneling architecture and …
gallium oxide (Ga 2 O 3) gated UV phototransistor with face tunneling architecture and …
Chemical modulation of conducting polymer gate electrode work function based double gate Mg2Si TFET for gas sensing applications
This work proposes a gas sensor device structure based on conducting polymer (CP) gate
and magnesium silicide source heterojunction FET (MSH-DG-TFET) to sense gases such as …
and magnesium silicide source heterojunction FET (MSH-DG-TFET) to sense gases such as …