Elemental Topological Dirac Semimetal: -Sn on InSb(111)

CZ Xu, YH Chan, Y Chen, P Chen, X Wang, C Dejoie… - Physical review …, 2017 - APS
Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a
versatile platform for exploring exotic electronic properties and topological phase transitions …

Conversion between spin and charge currents with topological insulators

S Zhang, A Fert - Physical Review B, 2016 - APS
Injection of a spin current into the surface or interface states of a topological insulator (TI)
induces a charge current (inverse Edelstein effect or IEE) and, inversely, a charge current …

Gapped electronic structure of epitaxial stanene on InSb (111)

CZ Xu, YH Chan, P Chen, X Wang, D Flötotto… - Physical Review B, 2018 - APS
Stanene (single-layer gray tin), with an electronic structure akin to that of graphene but
exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature …

Elemental Topological Dirac Semimetal α‐Sn with High Quantum Mobility

LD Anh, K Takase, T Chiba, Y Kota… - Advanced …, 2021 - Wiley Online Library
Abstract α‐Sn provides an ideal avenue to investigate novel topological properties owing to
its rich diagram of topological phases and simple elemental material structure. Thus far …

Recent advances in tin: from two-dimensional quantum spin hall insulator to bulk dirac semimetal

N Si, Q Yao, Y Jiang, H Li, D Zhou, Q Ji… - The Journal of …, 2020 - ACS Publications
An atomic layer of tin in a buckled honeycomb lattice, termed stanene, is a promising large-
gap two-dimensional topological insulator for realizing room-temperature quantum-spin-Hall …

Angular-resolved photoemission electron spectroscopy and transport studies of the elemental topological insulator -Sn

Q Barbedienne, J Varignon, N Reyren, A Marty… - Physical Review B, 2018 - APS
Gray tin, also known as α-Sn, can be turned into a three-dimensional topological insulator
(3D-TI) by strain and finite-size effects. Such room-temperature 3D-TI is peculiarly interesting …

Ferromagnetic/nonmagnetic nanostructures for the electrical measurement of the spin Hall effect

VT Pham, L Vila, G Zahnd, A Marty… - Nano …, 2016 - ACS Publications
Spin–orbitronics is based on the ability of spin–orbit interactions to achieve the conversion
between charge currents and pure spin currents. As the precise evaluation of the conversion …

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

MJA Jardine, D Dardzinski, M Yu… - … Applied Materials & …, 2023 - ACS Publications
Majorana zero modes, with prospective applications in topological quantum computing, are
expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb …

Tailoring the topological surface state in ultrathin -Sn(111) films

VA Rogalev, F Reis, F Adler, M Bauernfeind, J Erhardt… - Physical Review B, 2019 - APS
We report on the electronic structure of α-Sn films in the very low thickness regime grown on
InSb (111) A. High-resolution low photon energy angle-resolved photoemission …

[HTML][HTML] Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

I Madarevic, U Thupakula, G Lippertz, N Claessens… - APL Materials, 2020 - pubs.aip.org
In-plane compressively strained α-Sn films have been theoretically predicted and
experimentally proven to possess non-trivial electronic states of a 3D topological Dirac …