Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

Self-assembly of oxides as a bottom-up approach to functional nanostructures goes beyond
the conventional nanostructure formation based on lithographic techniques. Particularly …

Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

We develop a theoretical model to elucidate the nucleation of strained islands on patterned
substrates. We show that island nucleation is directed to the preferred sites by a much lower …

Low-energy-ion bombardment of semiconductors can lead to the development of complex
and diverse nanostructures. Of particular interest in these structured surfaces is the …

We demonstrate the possibility of growing SiGe islands on patterned Si (001) substrates with
pits having a continuous variation of the sidewall inclination angle α from α∼ 4° to α∼ 54° …

We devise a nonlinear dynamical model of the growth of strained islands on a pattern. We
study the morphological instability of a thin film that develops with a characteristic …

We investigate the optical properties of ordered Ge quantum dots (QDs) by means of micro-
photoluminescence spectroscopy (PL). These were grown on pit-patterned Si (001) …