Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …

The HfxZr1− xO2 (HZO) based ferroelectric field-effect transistors (FeFETs) with oxide
semiconductor channel have been proposed to have the potential of interface layer (IL) free …

In this study, we investigate the impact of nitridation in Hf Zr O2-based ferroelectric field-
effect transistors (FeFETs) with a SiON interfacial layer (IL). We fabricated the SiON IL using …

Hf0. 5Zr0. 5O2 (HZO)-based ferroelectric field effect transistor (FeFET) has been recognized
as a promising nonvolatile memory due to its excellent scalability and CMOS process …

In this work, by analyzing the properties and dynamics of defects in detail, the role of
nitrogen in improving the endurance of ferroelectric field-effect transistors (FeFETs) is …

We investigate charge trap** induced trap generation in Si ferroelectric field-effect
transistor (FeFET) with ferroelectric Hf0. 5Zr0. 5O2/SiO2 gate stacks by split–measurement …

Analog weight cells based on ferroelectric field-effect transistors (FeFETs) are promising for
fast and energy efficient compute-in-memory (CIM) accelerators, yet their on-chip training is …

In this work, we introduce an effective and versatile technique employing replacement
electrode solid phase epitaxy (SPE) to realize grain size reduction of the Zr-doped HfO2 …

In this study, we present a one-transistor-one-memristor (1T1M) programmable artificial
spiking neuron, achieved through the integration of a Hf0. 5 Zr0. 5 O2 ferroelectric transistor …

The novel HfO 2-based ferroelectric field effect transistor (FeFET) is considered a promising
candidate for next-generation nonvolatile memory (NVM). However, a series of reliability …