HfO 2-based resistive switching memory (RRAM) combines several outstanding properties,
such as high scalability, fast switching speed, low power, compatibility with complementary …

The shift towards a distributed computing paradigm, where multiple systems acquire and
elaborate data in real-time, leads to challenges that must be met. In particular, it is becoming …

Owing to their unique features such as thresholding and self‐relaxation behavior diffusive
memristors built from volatile electrochemical metallization (v‐ECM) devices are drawing …

With the increasing demand for artificially intelligent hardware systems for brain-inspired in-
memory and neuromorphic computing, understanding the underlying mechanisms in the …

This work presents the resistive switching characteristics of the TaO x-based conductive-
bridge random-access memory (CBRAM) for neuromorphic engineering. Controlling the Cu …

The Boltzmann Tyranny, set by thermionic statistics, dictates the lower limit of switching
slope (SS) of a MOSFET to be 60 mV/dec, the fundamental barrier for low-dissipative …

Volatile resistive switching random access memory (RRAM) devices are drawing attention in
both storage and computing applications due to their high ON-/OFF-ratio, fast switching …

The artificial touch neuron system has attracted the attention of researchers in the field of
artificial intelligence because of its potential application in human health monitoring and …

In the recent years, the need for fast, robust, and scalable memory devices have spurred the
exploration of advanced materials with unique electrical properties. Among these materials …

Chalcogenide materials have promising physical and electrical characteristics for use in
advanced memory and electronic synaptic devices. However, limited research has been …