Study of analog/Rf and stability investigation of surrounded gate junctionless graded channel MOSFET (SJLGC MOSFET)
This paper explores the potential advantage of surrounded gate junctionless graded
channel (SJLGC) MOSFET in the view of its Analog, RF performances using ATLAS TCAD …
channel (SJLGC) MOSFET in the view of its Analog, RF performances using ATLAS TCAD …
Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications
This article centers its attention on the phenomenon of electrostatics, linearity, analogue,
and RF performance of a 0.5 μm×(2× 100) μm double heterojunction AlGaAs/InGaAs/GaAs …
and RF performance of a 0.5 μm×(2× 100) μm double heterojunction AlGaAs/InGaAs/GaAs …
Performance analysis of gate stack DG-MOSFET for biosensor applications
In this paper the performance of gate stack metal oxide semiconductor field effect transistor
(MOSFET) is investigated with respect to different bio molecules for application as biosensor …
(MOSFET) is investigated with respect to different bio molecules for application as biosensor …
Study on analog/RF and linearity performance of staggered heterojunction gate stack tunnel FET
Staggered heterostructure gate stack TFET is proposed. The analog, RF, and linearity
performance of the device were studied in an ATLAS TCAD device simulator. The high K …
performance of the device were studied in an ATLAS TCAD device simulator. The high K …
Influence of oxide thickness variation on analog and RF performances of SOI FinFET
This paper focuses on the impact of variation in the thickness of the oxide (SiO 2) layer on
the performance parameters of a FinFET analysed by varying the oxide layer thickness in …
the performance parameters of a FinFET analysed by varying the oxide layer thickness in …
Quantum analytical model for lateral dual gate UTBB SOI MOSFET for analog/RF performance
This paper presents a quantum analytical modeling of UTBB SOIMOSFET as lateral dual
gate for the first time. In this paper, a 2-dimensional analytical modeling of electric field …
gate for the first time. In this paper, a 2-dimensional analytical modeling of electric field …
FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node
Stress engineering is one of the best techniques to enhance the potential of a device. In the
first phase of this work, the impact of stress on the physical and electrical performance of …
first phase of this work, the impact of stress on the physical and electrical performance of …
Study of DC and Analog/RF Performances Analysis of Short Channel Surrounded Gate Junctionless Graded Channel Gate Stack MOSFET
In order to pave the path for miniaturization process, surrounded gate junctionless graded
channel gate stack (SJLGCGS) MOSFET is reported in this present work, in the view of …
channel gate stack (SJLGCGS) MOSFET is reported in this present work, in the view of …
Design and investigation of a dual material gate arsenic alloy heterostructure junctionless TFET with a lightly doped Source
H **e, H Liu, S Chen, T Han, S Wang - Applied Sciences, 2019 - mdpi.com
This paper designs and investigates a novel structure of dual material gate-engineered
heterostructure junctionless tunnel field-effect transistor (DMGE-HJLTFET) with a lightly …
heterostructure junctionless tunnel field-effect transistor (DMGE-HJLTFET) with a lightly …
[HTML][HTML] Impact of back gate work function for enhancement of analog/RF performance of AJDMDG Stack MOSFET
In this work, the impact of back gate work function on analog/RF performance of Asymmetric
Junctionless Dual Material Double Gate MOSFET with high K gate Stack (AJDMDG Stack …
Junctionless Dual Material Double Gate MOSFET with high K gate Stack (AJDMDG Stack …