The discovery of novel materials that are stable at ambient conditions with emergent
functionalities is a pressing need of the 21st century to keep the pace of social and …

Exploring do** elements can enhance the efficiency of photocatalysis and allow for
tailored materials for specific applications. This study developed thin copper layers, both …

We report the electrical properties of Al0. 3Ga0. 7N/GaN heterojunction field effect transistor
(HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor …

Atomically smooth, pseudomorphic (Al 1− x Ga x) 2 O 3 thin films were grown for 0≤ x< 0.08
on R-plane sapphire (01.2) by pulsed laser deposition at growth temperatures up to 1000 C …

Alumina thin films were deposited on titanium (Ti) and fused quartz by both direct and
reactive pulsed rf magnetron sputtering techniques. X-ray diffraction, field emission scanning …

In the field of short-range optical interconnects, the development of low-power-consumption,
ultrawideband on-chip optical waveguide amplifiers is of critical importance. Central to this …

This paper discusses the synthesis and characterization of Al 2 O 3/Fe and Al 2 O 3/Ni
nanocomposite thin films formed by embedding Fe or Ni nanoparticles into alumina matrix …

The present work discusses about the synthesis of alumina thin films, which have
applications in current and next-generation solid-state electronic devices due to their …

Metalorganic chemical vapor deposition (MOCVD) of γ-Al 2 O 3 films is performed on MgO
(110) and (111) substrates by using trimethylaluminum and O 2 as the precursors. The …

Abstract Alumina (Al 2 O 3) thin films were prepared by RF magnetron sputtering technique
using Al 2 O 3 ceramic target. Effects of sputtering powers and oxygen gas mixtures were …