Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique
photonic properties facilitated by the advances of nanotechnologies such as nanofabrication …

Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …

The p–n junction was invented in the first half of the twentieth century and the latter half saw
the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s …

We revisited stacking fault identification based on the characteristic photoluminescence
emission wavelengths of 4H–SiC epitaxial wafers, and we investigated 50 000 stacking …

We show that the piezoelectric effect that describes the emergence of an electric field in
response to a crystal deformation in III-V semiconductors such as GaAs and InAs has strong …

Spontaneous formation of stacking faults in heavily nitrogen-doped 4H-polytype silicon
carbide crystals have been observed by transmission electron microscopy (TEM). Faults …

This paper reviews recent progress in the development of high-speed 4H–SiC bulk crystal
growth technology using the high-temperature gas-source method (high-temperature …

We present the results of first-principles plane-wave pseudopotential calculations of
piezoelectric coefficients of first and second order for a total of nine III-V binary phases (AlP …

Several 4° off-axis 4H-SiC wafers with several hundred microns of initial-stage growth by
PVT method are investigated by Synchrotron Monochromatic Beam X-ray Topography …

In this work, we identify the nucleation mechanism of threading dislocations (TDs)
associated with stacking faults (SFs) and 15R-SiC at the early growth stage of 4H-SiC single …