Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

The ultrawide band gap, high breakdown electric field, and large-area affordable substrates
make β-Ga2O3 promising for applications of next-generation power electronics, while its …

Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …

In this work, the possibility of using different generations of-Ga 2 O 3 as an ultra-wide-
bandgap power semiconductor device for high power converter applications is explored …

β-Ga 2 O 3 is a wide-bandgap semiconductor of significant technological importance for
electronics, but its low thermal conductivity is an impeding factor for its applications. In this …

This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

Beta-phase gallium oxide (β-Ga 2 O 3), the most thermally stable phase of Ga 2 O 3, has
stimulated great interest in power electronics due to its ultra-wide bandgap (∼ 4.9 eV) and …

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …