Single dopants in semiconductors

PM Koenraad, ME Flatté - Nature materials, 2011 - nature.com
The sensitive dependence of a semiconductor's electronic, optical and magnetic properties
on dopants has provided an extensive range of tunable phenomena to explore and apply to …

Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films

F Pan, C Song, XJ Liu, YC Yang, F Zeng - Materials Science and …, 2008 - Elsevier
This review article first presents a summary of current understanding of the magnetic
properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are …

Electronic excitations in nanostructures: an empirical pseudopotential based approach

G Bester - Journal of Physics: Condensed Matter, 2008 - iopscience.iop.org
Physics at the nanoscale has emerged as a field where discoveries of fundamental physical
effects lead to a greater understanding of the solid state. Additionally, the field is believed to …

Optically probing the fine structure of a single Mn atom in an InAs quantum dot

A Kudelski, A Lemaître, A Miard, P Voisin… - Physical review …, 2007 - APS
We report on the optical spectroscopy of a single InAs/GaAs quantum dot doped with a
single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn …

Detecting excitation and magnetization of individual dopants in a semiconductor

AA Khajetoorians, B Chilian, J Wiebe, S Schuwalow… - Nature, 2010 - nature.com
An individual magnetic atom doped into a semiconductor is a promising building block for
bottom-up spintronic devices and quantum logic gates,,. Moreover, it provides a perfect …

Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs

DH Lee, JA Gupta - Science, 2010 - science.org
Local manipulation of electric fields at the atomic scale may enable new methods for
quantum transport and creates new opportunities for field control of ferromagnetism and spin …

Effect of charge manipulation on scanning tunneling spectra of single Mn acceptors in InAs

F Marczinowski, J Wiebe, F Meier, K Hashimoto… - Physical Review B …, 2008 - APS
We present scanning tunneling spectroscopy measurements on Mn-doped InAs at low
temperatures. In the range of conduction band tunneling, we observe a ring of increased …

Quantum computing with acceptor-based qubits

S Rogge, J Salfi, JA Mol - US Patent 9,691,033, 2017 - Google Patents
SUMMARY OF THE INVENTION A quantum computer, comprising: One or more electrically
active acceptor atoms incorpo rated into crystalline silicon, wherein each acceptor atom …

Local Electronic Structure near Mn Acceptors in InAs: Surface-Induced Symmetry Breaking<? format?> and Coupling to Host States

F Marczinowski, J Wiebe, JM Tang, ME Flatté, F Meier… - Physical review …, 2007 - APS
We present low-temperature scanning tunneling spectroscopy measurements on Mn
acceptors in InAs in comparison with tight-binding calculations. We find a strong (001)-mirror …

Battle of the bands

N Samarth - Nature materials, 2012 - nature.com
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