Impurity diffusion and layer interdiffusion in Al x Ga1− x As‐GaAs heterostructures

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Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures

DG Deppe, N Holonyak Jr - Journal of applied physics, 1988 - pubs.aip.org
The process of impurity‐induced layer disordering (IILD) or layer intermixing, in Al x Ga1− x
As‐GaAs quantum well heterostructures (QWHs) and superlattices (SLs), and in related III‐V …
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Dopant and defect energetics: Si in GaAs

JE Northrup, SB Zhang - Physical Review B, 1993 - APS
We calculate the formation energy of Si donors, acceptors, and defect complexes in GaAs.
From these energies we obtain the equilibrium concentrations of native defects and Si …
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