Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …
Ballistic two-dimensional InSe transistors
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
High-performance sub-10 nm monolayer Bi 2 O 2 Se transistors
A successful two-dimensional (2D) semiconductor successor of silicon for high-performance
logic in the post-silicon era should have both excellent performance and air stability …
logic in the post-silicon era should have both excellent performance and air stability …
Performance limit of monolayer MoSi 2 N 4 transistors
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
Can carbon nanotube transistors be scaled down to the sub-5 nm gate length?
Single-walled carbon nanotubes (CNTs) have been considered as a promising
semiconductor to construct transistors and integrated circuits in the future owing to their …
semiconductor to construct transistors and integrated circuits in the future owing to their …
Performance limit of ultrathin GaAs transistors
High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …
Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional
In the post-Moore era, improving energy efficiency is an urgent requirement for
microelectronics moving towards the Internet of Things, artificial intelligence, and 5G. In …
microelectronics moving towards the Internet of Things, artificial intelligence, and 5G. In …
Indium do**-assisted monolayer Ga 2 O 3 exfoliation for performance-enhanced MOSFETs
P Li, L Dong, C Li, B Lu, C Yang, B Peng, W Wang… - Nanoscale, 2023 - pubs.rsc.org
Monolayer (ML) Ga2O3 with outstanding properties is promising for advanced nanodevice
applications; however, its high exfoliation energy makes obtaining it challenging. In this …
applications; however, its high exfoliation energy makes obtaining it challenging. In this …
First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga2O3
Y Ma, L Dong, P Li, L Hu, B Lu, Y Miao… - … applied materials & …, 2022 - ACS Publications
The electronic properties of monolayer (ML) Ga2O3 and transport properties of ML Ga2O3-
based n-type metal–oxide–semiconductor field-effect transistors (MOSFETs) are …
based n-type metal–oxide–semiconductor field-effect transistors (MOSFETs) are …