A review of SiC power module packaging technologies: Challenges, advances, and emerging issues

H Lee, V Smet, R Tummala - IEEE Journal of Emerging and …, 2019 - ieeexplore.ieee.org
Power module packaging technologies have been experiencing extensive changes as the
novel silicon carbide (SiC) power devices with superior performance become commercially …

Comprehensive review and state of development of double-sided cooled package technology for automotive power modules

M Liu, A Coppola, M Alvi… - IEEE Open Journal of …, 2022 - ieeexplore.ieee.org
Power modules are core components of inverters in electric vehicles and their packaging
technology has a critical impact on system performance and reliability. Conventional single …

A 1200-V, 60-A SiC MOSFET multichip phase-leg module for high-temperature, high-frequency applications

Z Chen, Y Yao, D Boroyevich, KDT Ngo… - … on Power Electronics, 2013 - ieeexplore.ieee.org
In this paper, a high-temperature, high-frequency, wire-bond-based multichip phase-leg
module was designed, fabricated, and fully tested. Using paralleled Silicon Carbide (SiC) …

Silicon carbide converters and MEMS devices for high-temperature power electronics: A critical review

X Guo, Q Xun, Z Li, S Du - Micromachines, 2019 - mdpi.com
The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …

Review of topside interconnections for wide bandgap power semiconductor packaging

L Wang, W Wang, RJE Hueting… - … on Power Electronics, 2022 - ieeexplore.ieee.org
Due to their superior material properties, wide bandgap (WBG) semiconductors enable the
application of power electronics at higher temperature operation, higher frequencies, and …

Nickel–tin transient liquid phase bonding toward high-temperature operational power electronics in electrified vehicles

SW Yoon, MD Glover, K Shiozaki - IEEE Transactions on Power …, 2012 - ieeexplore.ieee.org
This paper presents the concept, fabrication, and evaluation for quality and reliability of
nickel-tin transient liquid phase (Ni-Sn TLP) bonding that provides high reliability for high …

A high temperature silicon carbide MOSFET power module with integrated silicon-on-insulator-based gate drive

Z Wang, X Shi, LM Tolbert, F Wang… - … on Power Electronics, 2014 - ieeexplore.ieee.org
This paper presents a board-level integrated silicon carbide (SiC) mosfet power module for
high temperature and high power density application. Specifically, a silicon-on-insulator …

Development of a SiC JFET-based six-pack power module for a fully integrated inverter

F Xu, TJ Han, D Jiang, LM Tolbert… - … on Power Electronics, 2012 - ieeexplore.ieee.org
In this paper, a fully integrated silicon carbide (SiC)-based six-pack power module is
designed and developed. With 1200-V, 100-A module rating, each switching element is …

A high-temperature sic three-phase ac-dc converter design for> 100/spl deg/c ambient temperature

R Wang, D Boroyevich, P Ning, Z Wang… - … on Power Electronics, 2012 - ieeexplore.ieee.org
High-temperature (HT) converters have gained importance in industrial applications where
the converters operate in a harsh environment, such as in hybrid electrical vehicles, aviation …

Challenges regarding parallel connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski… - … on Power Electronics, 2012 - ieeexplore.ieee.org
State-of-the-art silicon carbide switches have current ratings that are not sufficiently high to
be used in high-power converters. It is, therefore, necessary to connect several switches in …