Droplet epitaxy of semiconductor nanostructures for quantum photonic devices

M Gurioli, Z Wang, A Rastelli, T Kuroda… - Nature materials, 2019‏ - nature.com
The long dreamed 'quantum internet'would consist of a network of quantum nodes (solid-
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …

Nanomaterials for quantum information science and engineering

A Alfieri, SB Anantharaman, H Zhang… - Advanced …, 2023‏ - Wiley Online Library
Quantum information science and engineering (QISE)—which entails the use of quantum
mechanical states for information processing, communications, and sensing—and the area …

Engineered quantum dot single-photon sources

S Buckley, K Rivoire, J Vučković - Reports on Progress in Physics, 2012‏ - iopscience.iop.org
Fast, high efficiency and low error single-photon sources are required for the implementation
of a number of quantum information processing applications. The fastest triggered single …

Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate

YH Huo, A Rastelli, OG Schmidt - Applied Physics Letters, 2013‏ - pubs.aip.org
We prepare symmetry-controlled GaAs/AlGaAs quantum dots (QDs) on (001) GaAs
substrates by infilling GaAs into AlGaAs nanoholes. For the most symmetric QDs, we …

[ספר][B] Electron & Nuclear Spin Dynamics in Semiconductor Nanostructures

MM Glazov - 2018‏ - books.google.com
In recent years, the physics community has experienced a revival of interest in spin effects in
solid state systems. On one hand, the solid state systems, particularly, semiconductors and …

Symmetric quantum dots as efficient sources of highly entangled photons: Violation of Bell's inequality without spectral and temporal filtering

T Kuroda, T Mano, N Ha, H Nakajima, H Kumano… - Physical Review B …, 2013‏ - APS
An ideal emitter of entangled photon pairs combines the perfect symmetry of an atom with
the convenient electrical trigger of light sources based on semiconductor quantum dots. Our …

High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy

F Basso Basset, S Bietti, M Reindl, L Esposito… - Nano …, 2018‏ - ACS Publications
Several semiconductor quantum dot techniques have been investigated for the generation
of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control …

[HTML][HTML] Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111) A,(111) B, and (110)

CD Yerino, B Liang, DL Huffaker… - Journal of Vacuum …, 2017‏ - pubs.aip.org
For more than 50 years, research into III–V compound semiconductors has focused almost
exclusively on materials grown on (001)-oriented substrates. In part, this is due to the …

InAs/AlGaAs quantum dots for single-photon emission in a red spectral range

MV Rakhlin, KG Belyaev, GV Klimko, IS Mukhin… - Scientific Reports, 2018‏ - nature.com
We report on comparative optical studies of InAs/Al0. 44Ga0. 56As quantum dots (QDs)
grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted …

Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion

N Ha, T Mano, YL Chou, YN Wu, SJ Cheng, J Bocquel… - Physical Review B, 2015‏ - APS
Making use of droplet epitaxy, we systematically controlled the height of self-assembled
GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra …