This paper describes the recent advances in flexible oxide thin-film transistors (TFTs), one of
the rapidly emerging technologies for the next-generation display applications. First, the …

The current article is a review of recent progress and major trends in the field of flexible
oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes …

Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by
atomic layer deposition (ALD) using [1, 1, 1-trimethyl-N-(trimethylsilyl) silanaminato] indium …

Indium oxide thin films are deposited via plasma-enhanced atomic layer deposition (PEALD)
to exploit their potential as a semiconductor in high mobility thin-film transistors (TFTs) …

We developed heterojunction electron-transfer layers (ETLs) comprising layers of metal
oxides and phenyl-C 71-butyric acid methyl ester (PCBM) for use in glass/indium tin …

Multi-layer heterostructure oxide semiconductors employing a layer-by-layer deposition of
alternating indium oxide and zinc oxide thin films generated via atomic layer deposition …

The performance of conventional ZnSnO (ZTO) amorphous oxide semiconductor thin-film
transistors deposited by atomic layer deposition was optimized at annealing temperatures …

The realization of high performance solution-processable metal oxide thin-film transistors
(TFTs) with low annealing temperatures remains a challenge in the field of flexible and/or …

Record high field‐effect mobility (µFE) thin film transistors (TFTs) based on 5 and 7 nm
thickness SnON channel layer is reported. The SnON TFT device with 7.6% nitrogen content …

Zinc oxide and zinc oxide doped with tin oxide (ZnO-SnO2) particles were synthesized and
successfully incorporated into a polymeric matrix by the photopolymerization reaction in the …