Machine learning: next promising trend for microplastics study

J Su, F Zhang, C Yu, Y Zhang, J Wang, C Wang… - Journal of …, 2023 - Elsevier
Microplastics (MPs), as an emerging pollutant, pose a significant threat to humans and
ecosystems. However, traditional MPs characterization methods are limited by sample …

Prediction of FinFET current-voltage and capacitance-voltage curves using machine learning with autoencoder

K Mehta, HY Wong - IEEE Electron Device Letters, 2020 - ieeexplore.ieee.org
In this letter, we demonstrated the possibility of predicting full transistor current-voltage (IV)
and capacitance-voltage (CV) curves using machines trained by Technology Computer …

[HTML][HTML] Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines

X Li, Z Wu, G Rzepa, M Karner, H Xu, Z Wu… - Fundamental …, 2024 - Elsevier
Advancements in the semiconductor industry introduce novel channel materials, device
structures, and integration methods, leading to intricate physics challenges when …

TCAD-augmented machine learning with and without domain expertise

H Dhillon, K Mehta, M ** profile of stacked nanosheet transistors
H Xu, W Gan, L Cao, C Yang, J Wu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Complex nonlinear dependence of ultra-scaled transistor performance on its channel
geometry and source/drain (S/D) do** profile bring obstacles in the advanced technology …

Acceleration of semiconductor device simulation with approximate solutions predicted by trained neural networks

SC Han, J Choi, SM Hong - IEEE Transactions on Electron …, 2021 - ieeexplore.ieee.org
In order to accelerate the semiconductor device simulation, we propose to use a neural
network to learn an approximate solution for desired bias conditions. With an initial solution …

A machine learning approach for optimizing and accurate prediction of performance parameters for stacked nanosheet transistor

N Kumar, V Rajakumari, RP Padhy, S Routray… - Physica …, 2024 - iopscience.iop.org
In this article, the possibilities of accurate prediction of wide range of parameters and
optimizing the same through machine learning (ML) approach have been demonstrated for …

TCAD simulation models, parameters, and methodologies for β-Ga2O3 power devices

HY Wong - ECS Journal of Solid State Science and Technology, 2023 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging material and has the potential to revolutionize power
electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared …

Rapid MOSFET contact resistance extraction from circuit using SPICE-augmented machine learning without feature extraction

T Lu, V Kanchi, K Mehta, S Oza, T Ho… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
It is desirable to monitor the degradation of integrated circuits (ICs) or perform their failure
analysis through their electrical characteristics [such as the voltage-transfer characteristic …

Out-of-training-range Synthetic FinFET and Inverter Data Generation using a Modified Generative Adversarial Network

V Eranki, N Yee, HY Wong - IEEE Electron Device Letters, 2022 - ieeexplore.ieee.org
In this letter, a novel variation of Generative Adversarial Network (GAN) is proposed and
used to predict device and circuit characteristics based on design parameters. Unlike …