This paper continues our work on what we call stochastic printing failures, ie random, non-
repeating, isolated defects which we believe to be the result of the particle nature of light and …

Stochastic effects in lithography are known to be the cause of critical dimension (CD)
variability, quantified, eg, by linewidth roughness or local CD uniformity, but—when the CDs …

The combination photoresist-underlayer fulfills a central role in EUVL for patterning.
Moreover, future high numerical aperture (NA) and tight pitches will require very thin layers …

Extreme ultra-violet lithography (EUVL) is the leading-edge technology to produce
advanced nanoelectronics. The further development of EUVL is heavily based on …

In extreme ultraviolet lithography (EUVL), underlayers have been introduced to improve
process window, stochastic printing failures, LWR and even photo-speed. As a result …