We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …

This review paper begins with a brief overview of the most common ferroelectric materials,
the perovskites and the Aurivillius families. The epitaxial growth of ferroelectric epitaxial films …

The use of bismuth-layered perovskite films for planar-type nonvolatile ferroelectric random-
access memories requires films with spontaneous polarization normal to the plane of …

Epitaxial (001)-,(118)-, and (104)-oriented Nd-doped Bi 4 Ti 3 O 12 films have been grown
by pulsed-laser deposition from a Bi 4− x Nd x Ti 3 O 12 (x= 0.85) target on SrRuO 3 coated …

The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field
effect transistors with silicon-doped HfO 2 is proposed and theoretically examined for the first …

Epitaxially twinned 001-, 118-, and 104-oriented La-substituted Bi4Ti3O12 BLT ferroelectric
films have been grown by pulsed laser deposition on 001-, 011-, and 111-oriented SrTiO3 …

This article describes the current progress in thin bismuth layer-structured ferroelectric films
(BLSFs) including Sr Bi 2 Ta 2 O 9 and (Bi, La) 4 Ti 3 O 12⁠, particularly those developed in …

Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam
epitaxy on (001)-,(011)-, and (111)-orientated SrTiO3 single-crystal substrates. The growth …

Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with
channel lengths of 85 nm were fabricated by a replacement-gate process. They had …

We investigated the ferroelectric switching dynamics as well as the multiferroic and
piezoelectric properties of highly a‐oriented epitaxial Bi5Ti3FeO15 (BTFO) thin films on Nb …