Transfer of correlations from photons to electron excitations and currents induced in semiconductor quantum wells by non-classical twisted light
OV Tikhonova, EN Voronina - Journal of Physics: Condensed …, 2021 - iopscience.iop.org
In this paper the excitations of collective electronic modes and currents induced in
nanostructured semiconductor systems by two-mode quantum light with non-zero orbital …
nanostructured semiconductor systems by two-mode quantum light with non-zero orbital …
Carrier Diffusion in : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion
We determine the diffusion length of excess carriers in Ga N by spatially resolved
cathodoluminescence spectroscopy utilizing a single quantum well as a carrier collector or …
cathodoluminescence spectroscopy utilizing a single quantum well as a carrier collector or …
On the fractional perturbation theory and optical transitions in bulk semiconductors: Emergence of negative dam** and variable charged mass
This study is devoted to the construction of a fractional perturbation theory which represents
the basic technique of approximation in quantum mechanics. Our analysis is based on the …
the basic technique of approximation in quantum mechanics. Our analysis is based on the …
Phonon decay in silicon nanocrystals: Fast phonon recycling
AA Prokofiev, AN Poddubny, IN Yassievich - Physical Review B, 2014 - APS
We present a theory of electron-phonon interaction and phonon decay in Si nanocrystals
based on sp 3 d 5 s* empirical tight-binding model and anharmonic Keating model. We …
based on sp 3 d 5 s* empirical tight-binding model and anharmonic Keating model. We …
All-optical control of excitons in semiconductor quantum wells
Applying the Floquet theory, we developed the method to control excitonic properties of
semiconductor quantum wells (QWs) by a high-frequency electromagnetic field. It is …
semiconductor quantum wells (QWs) by a high-frequency electromagnetic field. It is …
Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells
Subpicosecond time-resolved differential transmission spectroscopy has been used to
investigate the carrier density and temperature dependence of the quantum well electron …
investigate the carrier density and temperature dependence of the quantum well electron …
Tight-binding simulation of silicon and germanium nanocrystals
AV Gert, MO Nestoklon, AA Prokofiev, IN Yassievich - Semiconductors, 2017 - Springer
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-
binding method. First we give the short outline of the modeling methods and their application …
binding method. First we give the short outline of the modeling methods and their application …
Surface scattering velocities in III-nitride quantum well laser structures via the emission of hybrid phonons
We have theoretically and numerically studied nitride-based quantum well (QW) laser
structures. More specifically, we have used a QW made with III-nitride where the width of the …
structures. More specifically, we have used a QW made with III-nitride where the width of the …
Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1− xAs
We theoretically and numerically present the hybrid phonon modes for the double
heterostructure GaAs/Al x Ga 1-x As and their interactions with electrons. More specifically …
heterostructure GaAs/Al x Ga 1-x As and their interactions with electrons. More specifically …
Full-band electronic structure calculation of semiconductor nanostructures: a reduced-order approach
We propose an efficient reduced-order technique for electronic structure calculations of
semiconductor nanostructures, suited for inclusion in full-band quantum transport simulators …
semiconductor nanostructures, suited for inclusion in full-band quantum transport simulators …