A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Ultrawide‐bandgap semiconductors: research opportunities and challenges
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
AlGaN photonics: recent advances in materials and ultraviolet devices
D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
Material platforms for defect qubits and single-photon emitters
Quantum technology has grown out of quantum information theory and now provides a
valuable tool that researchers from numerous fields can add to their toolbox of research …
valuable tool that researchers from numerous fields can add to their toolbox of research …
Thermal percolation threshold and thermal properties of composites with high loading of graphene and boron nitride fillers
We investigated thermal properties of the epoxy-based composites with the high loading
fraction—up to f≈ 45 vol%—of the randomly oriented electrically conductive graphene fillers …
fraction—up to f≈ 45 vol%—of the randomly oriented electrically conductive graphene fillers …
Electrical and optical control of single spins integrated in scalable semiconductor devices
Spin defects in silicon carbide have the advantage of exceptional electron spin coherence
combined with a near-infrared spin-photon interface, all in a material amenable to modern …
combined with a near-infrared spin-photon interface, all in a material amenable to modern …
Anisotropic thermal conductivity in single crystal β-gallium oxide
The thermal conductivities of β-Ga 2 O 3 single crystals along four different crystal directions
were measured in the temperature range of 80–495 K using the time domain …
were measured in the temperature range of 80–495 K using the time domain …
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling
The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …
power-efficient semiconductor devices, which are only possible with materials that can …