Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

The large variety of 2D materials and their co-integration in van der Waals heterostructures
enable innovative device engineering. In addition, their atomically thin nature promotes the …

Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new
capabilities to the microelectronics industry. However, in order for spintronic devices to meet …

Symmetry plays a central role in determining the polarization of spin currents induced by
electric fields. It also influences how these spin currents generate spin-transfer torques in …

Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

Abstract Spin–orbit torque (SOT)-driven deterministic control of the magnetic state of a
ferromagnet with perpendicular magnetic anisotropy is key to next-generation spintronic …

BACKGROUND The electron can be considered as a tiny magnet, with two opposite poles
defining its magnetic field associated with the spin and orbital motion. When such minuscule …