A perspective on non-stoichiometry in silicon carbide
A Majid - Ceramics International, 2018 - Elsevier
The non-stoichiometric ceramics are amazing materials with potential to offer applications
that are unachievable by using otherwise ideal stoichiometric counterparts. These materials …
that are unachievable by using otherwise ideal stoichiometric counterparts. These materials …
Structural and phonon transport analysis of surface-activated bonded SiC-SiC homogenous interfaces
X Zhao, Y Qu, N Deng, J Yuan, L Du, W Hu… - Applied Surface …, 2024 - Elsevier
To avoid the interfacial thermal stress problem caused by high temperature, room
temperature bonding techniques such as surface-activated bonding (SAB) are currently …
temperature bonding techniques such as surface-activated bonding (SAB) are currently …
An effective utilization of raw fly ash obtained from thermal power plants using thermal spray technique to improve corrosion resistance for marine applications
Marine-grade steel structures in offshore environments often corrode due to the aggressive
environmental conditions. Many ceramic materials can cater to this demand. However, as …
environmental conditions. Many ceramic materials can cater to this demand. However, as …
An investigation of slurry erosion behaviour in plasma-sprayed carbon nanotube-reinforced fly ash/alumina coatings using experimental analysis and artificial neural …
This study investigates carbon nanotube (CNT)-reinforced alumina fly ash (FA) coatings,
namely AF (unreinforced), 1CAF (with 1 wt% CNT), and 2CAF (with 2 wt% CNT), on marine …
namely AF (unreinforced), 1CAF (with 1 wt% CNT), and 2CAF (with 2 wt% CNT), on marine …
Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures
Poor electron mobility at SiC/SiO 2 interfaces has long held up the development of SiC-
based power devices. The mobility degradation has been attributed to defects at the …
based power devices. The mobility degradation has been attributed to defects at the …
Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces
Metal-oxide-semiconductor (MOS) interfaces on n-type 4H and 6H-SiC annealed in nitric
oxide (NO) for various times were electrically characterized by high-frequency capacitance …
oxide (NO) for various times were electrically characterized by high-frequency capacitance …
Controlling factors in tensile deformation of nanocrystalline cobalt and nickel
In an effort to understand and enhance the tensile ductility of truly nanocrystalline metals, we
have investigated and compared the mechanical behavior, especially the tensile behavior …
have investigated and compared the mechanical behavior, especially the tensile behavior …
Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections
Inelastic scattering and carrier capture by defects in semiconductors are the primary causes
of hot-electron-mediated degradation of power devices, which holds up their commercial …
of hot-electron-mediated degradation of power devices, which holds up their commercial …
Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect …
We present a systematic characterization of the transition layer at the 4H-SiC/SiO 2 interface
as a function of nitric oxide (NO) post-annealing time, using high-resolution transmission …
as a function of nitric oxide (NO) post-annealing time, using high-resolution transmission …
Amorphization and C segregation based surface generation of reaction-bonded SiC/Si composites under micro-grinding
Abstract Micro-grinding of Reaction-Bonded SiC/Si composites (RB–SiC/Si) were conducted
to investigate the surface generation mechanism. The results showed that amorphization …
to investigate the surface generation mechanism. The results showed that amorphization …