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Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
The aim of this review paper is to describe in a comprehensive manner the current
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …
Compact modeling of total ionizing dose and aging effects in MOS technologies
This paper presents a physics-based compact modeling approach that incorporates the
impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide …
impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide …
Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance
Total ionizing dose results are provided, showing the effects of different threshold adjust
implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation …
implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
Total ionizing dose effects in multiple-gate field-effect transistor
M Gaillardin, C Marcandella, M Martinez… - Semiconductor …, 2017 - iopscience.iop.org
This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect
transistors. The impact of device architecture, geometry and scaling on the TID response of …
transistors. The impact of device architecture, geometry and scaling on the TID response of …
Geometry dependence of total-dose effects in bulk FinFETs
<? Pub Dtl=""?> The total ionizing dose (TID) response of bulk FinFETs is investigated for
various geometry variations, such as fin width, channel length, and fin pitch. The buildup of …
various geometry variations, such as fin width, channel length, and fin pitch. The buildup of …
Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs
The total ionizing dose (TID) response of double-gate SiGe-\rmSiO_2/\rmHfO_2\p MOS
FinFET devices is investigated under different device bias conditions. Negative bias …
FinFET devices is investigated under different device bias conditions. Negative bias …
Characterization and modeling of Gigarad-TID-induced drain leakage current of 28-nm bulk MOSFETs
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad
(SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk …
(SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk …
An effective method to compensate total ionizing dose-induced degradation on double-SOI structure
The existence of buried oxide (BOX) layer and the strong coupling effect between the front
and back channels can worsen the radiation-induced degradation on fully depleted silicon …
and back channels can worsen the radiation-induced degradation on fully depleted silicon …
Fin width and bias dependence of the response of triple-gate MOSFETs to total dose irradiation
The total ionizing dose response of triple-gate MOSFETs is investigated for various fin
widths and bias conditions. Experiments and simulations are used to analyze the buildup of …
widths and bias conditions. Experiments and simulations are used to analyze the buildup of …